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Ordering number:ENN6321
PNP/NPN Epitaxial Planar Silicon Transistors
2SA2014/2SC5567
DC/DC Converter Applications
Applications
* Relay drivers, lamp drivers, motor drivers, strobes.
Package Dimensions
unit:mm 2163
[2SA2014/2SC5567]
4.5 1.6 1.5
Features
* Adoption of MBIT processes. * Large current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching. * Ultrasmall-sized package permitting applied sets to be made small and slim. * High allowable power dissipation.
3 0.5 0.4 1.5 3.0 0.75
2
1 0.4
1.0
2.5 4.25max
Specifications
( ) : 2SA2014 Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg
Mounted on a ceramic board (250mm2x0.8mm) Tc=25C
1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view)
Conditions
Ratings (-)15 (-)15 (-)5 (-)9 (-)12 (-)1.2 1.3 3.5 150 -55 to +150
Unit V V V A A A W W
C C
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob VCB=(-)12V, IE=0 VEB=(-)4V, IC=0 VCE=(-)2V, IC=(-)500mA VCE=(-)2V, IC=(-)500mA VCB=(-)10V, f=1MHz 200 (220) 280 (90)50 Conditions Ratings min typ max (-)0.1 (-)0.1 560 MHz MHz pF Unit A A
Marking : 2SA2014 : AU 2SC5567 : FD
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21000TS (KOTO) TA-2598 No.6321-1/5
2SA2014/2SC5567
Continued on preceding page.
Parameter Symbol Conditions IC=(-)3A, IB=(-)60mA Collector-to-Emitter Saturation Voltage VCE(sat) IC=(-)4.5A, IB=(-)90mA Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time VBE(sat) IC=(-)3A, IB=(-)60mA (-)15 (-)15 (-)5 30 (120) 180 (14)25 Ratings min typ (-110) 120 (-160) 180 (-)0.85 max (-170) 180 (-240) 280 (-)1.2 Unit mV mV mV mV V V V V ns ns ns ns
V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO ton tstg tf IE=(-)10A, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit
Switching Time Test Circuit
PW=20s D.C.1% INPUT VR 50 RB + + 100F 470F VBE=--5V VCC=5V 20IB1= --20IB2= IC=3A IB1 IB2 (For PNP, the polarity is reversed.) OUTPUT RL
--9 --8
IC -- VCE
2SA2014 --90mA
A --80m 0mA --7 --60mA
9 8
IC -- VCE
2SC5567 90mA
80m
A
Collector Current, IC - A
--7 --6 --5 --4 --3 --2
Collector Current, IC - A
7
70mA 60mA 50mA
40mA
30mA 20mA
--
--40mA --30mA --20mA --10mA
5 4 3 2 1
10
0 10
0m
m
A
--50mA
6
A
10mA IB=0
0 0.1 0.2 0.3 0.4 0.5 IT00171
--1 0 0 --0.1 --0.2 --0.3 --0.4
IB=0
--0.5 IT00170
0
Collector-to-Emitter Voltage, VCE - V
--9 --8
Collector-to-Emitter Voltage, VCE - V
9 8
IC -- VBE
2SA2014 VCE=--2V
IC -- VBE
2SC5567 VCE=2V
Collector Current, IC - A
--7 --6
Collector Current, IC - A
7 6 5 4 3 2 1 0 0
25C
--5 --4 --3
25C
C
Ta=7 5
--25C
--2 --1 0 0
Ta=7 5C
0.2 0.4 0.6
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
Base-to-Emitter Voltage, VBE - V
IT00172
Base-to-Emitter Voltage, VBE - V
0.8
--25 C
1.0
1.2
1.4 IT00173
No.6321-2/5
2SA2014/2SC5567
1000 7 5
hFE -- IC
Ta=75C 25C --25C 2SA2014 VCE=--2V
1000 7 5
hFE -- IC
2SC5567 VCE=2V Ta=75C --25C
DC Current Gain, hFE
DC Current Gain, hFE
3 2
3 2
25C
100 7 5 3 2
100 7 5 3 2
10 --0.01
2
3
5 7 --0.1
2
3
Collector Current, IC - A
5 7 --1.0
2
3
5 7 --10 IT00174
10 0.01
2
3
5 7 0.1
2
3
Collector Current, IC - A
5 7 1.0
2
3
5 7 10 IT00175
--1000 7
VCE(sat) -- IC
2SA2014 IC / IB=20
1000 7
VCE(sat) -- IC
2SC5567 IC / IB=20
Collector-to-Emitter Saturation Voltage, VCE (sat) - mV
Collector-to-Emitter Saturation Voltage, VCE (sat) - mV
5 3 2
5 3 2 100 7 5 3 2 10 7 5 0.01
--100 7 5 3 2 --10 7 5 --0.01
= Ta
C 75
25C
C 5 --2
C 75 a= T C 5 --2
25C
2
3
5 7 --0.1
2
3
Collector Current, IC - A
5 7 --1.0
2
3
5 7 --10 IT00176
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC - A
1000
5 7 10 IT00178
--1000 7
VCE(sat) -- IC
2SA2014 IC / IB=50
VCE(sat) -- IC
2SC5567 IC / IB=50
7
Collector-to-Emitter Saturation Voltage, VCE (sat) - mV
Collector-to-Emitter Saturation Voltage, VCE (sat) - mV
5 3 2 --100 7 5 3 2 --10 7 5 --0.01 2 3 5 7 --0.1 2 3
5 3 2 100 7 5 3 2 10 7 5 0.01
=7 Ta
5C
5C --2
25C
C 75 a= T C 5 --2
25C
Collector Current, IC - A
5 7 --1.0
2
3
5 7 --10 IT00177
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC - A
10000
5 7 10 IT00179
--10000 7
VBE(sat) -- IC
2SA2014 IC / IB=50
VBE(sat) -- IC
2SC5567 IC / IB=50
7
Base-to-Emitter Saturation Voltage, VBE (sat) - mV
Base-to-Emitter Saturation Voltage, VBE (sat) - mV
5 3 2
5 3 2
--1000 7 5 3 2
Ta=--25C 75C 25C
1000 7 5 3 2 100 0.01
Ta=--25C
75C
25C
--100 --0.01
2
3
5 7 --0.1
2
3
Collector Current, IC - A
5 7 --1.0
2
3
5 7 --10 IT00180
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC - A
5 7 10 IT00181
No.6321-3/5
2SA2014/2SC5567
1000 7 5
Cob -- VCB
2SA2014 f=1MHz
1000 7 5
Cob -- VCB
2SC5567 f=1MHz
Output Capacitance, Cob - pF
Output Capacitance, Cob - pF
3 2 100 7 5 3 2 10 7 5 3 2 1.0 --1.0 2 3 5 7 --10 2 3
3 2 100 7 5 3 2 10 7 5 3 2 1.0 1.0 2 3 5 7 10 2 3
Collector-to-Base Voltage, VCB -- V
1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.01
IT00182 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.01
Collector-to-Base Voltage, VCB -- V
IT00183
f T -- IC
2SA2014 VCE=--2V
f T -- IC
2SC5567 VCE=2V
Gain-Bandwidth Product, fT - MHz
Gain-Bandwidth Product, fT - MHz
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC - A
3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
5 7 --10 IT00184
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC - A
1.5
5 7 10 IT00185
ASO
ICP IC
PC -- Ta
2SA2014 / 2SC5567
10 s 0
Collector Current, IC - A
10
DC
Collector Dissipation, PC - W
10
op
1m s ms s
n
1.3
M
1.0
50 s 0
ou
0m
nt
ed
era
on
tio
ac
er
am
ic
bo
ar
d
(2
0.5
50
m
0.01 0.1
2SA2014 / 2SC5567 Tc=25C Single pulse For PNP, the minus sign (-) is omitted
2 3 5 7 1.0 2 3 5 7 10 2 3
m2 x0
.8
m
m
)
160
0 0 20 40 60 80 100 120 140 IT00186
Collector-to-Emitter Voltage, VCE - V
4.0 3.5
Ambient Temperature, Ta - C
IT00187
PC -- Tc
2SA2014 / 2SC5567
Collector Dissipation, PC - W
3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160
Case Temperature, Tc - C
IT01871
No.6321-4/5
2SA2014/2SC5567
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of February, 2000. Specifications and information herein are subject to change without notice.
PS No.6321-5/5

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